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May 2008
FDD8447L
40V N-Channel PowerTrench ? MOSFET
40V, 5 0 A, 8.5m ?
Features
Max r DS(on) = 8.5m ? at V GS = 10V, I D = 14A
Max r DS(on) = 11 .0 m ? at V GS = 4.5V, I D = 11A
Fast Switching
General Description
This N-Channel MOSFET has been produced using Fairchild
Semiconductor’s proprietary PowerTrench ? technology to
deliver low r DS(on) and optimized BV DSS capability to offer
superior performance benefit in the application.
RoHS Compliant
Application s
Inverter
Power Supplies
D
G
S
T O -2 K
D -PA 52
(TO -252)
D
G
S
MOSFET Maximum Ratings T C = 25°C unless otherwise noted
Symbol
V DS
V GS
Drain to Source Voltage
Gate to Source Voltage
Parameter
Ratings
40
±20
Units
V
V
Drain Current
-Continuous (Package limited)
T C = 25°C
50
I D
-Continuous (Silicon limited)
-Continuous
T C = 25°C
T A = 25°C
(Note 1a)
57
1 5.2
A
-Pulsed
100
I S
Max Pulse Diode Current
100
A
E AS
P D
T J , T STG
Drain-Source Avalanche Energy
Power Dissipation
T C = 25°C
T A = 25°C
T A = 25°C
Operating and Storage Junction Temperature Range
(Note 3)
(Note 1a)
(Note 1b)
153
44
3.1
1.3
- 55 to +150
mJ
W
° C
Thermal Characteristics
R θ JC
Thermal Resistance, Junction to Case
2.8
R θ JA
R θ JA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1a)
(Note 1 b )
40
96
°C/W
Package Marking and Ordering Information
Device Marking
FDD8447L
Device
FDD8447L
Package
D-PAK(TO-252)
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
?200 8 Fairchild Semiconductor Corporation
FDD8447L Rev.C 3
1
www.fairchildsemi.com
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